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SUD50N04-37P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) r DS(on) ( Ω )
0.037 at V GS = 10 V
40
0.046 at V GS = 4.5 V
I D (A) a
8
8
Q g (Typ.)
5.3 nC
FEATURES
? TrenchFET ? Power MOSFET
? 100 % UIS Tested
APPLICATIONS
RoHS
COMPLIANT
? Backlight Inverter for LCD Display
? Full Bridge DC/DC Converter
TO-252
D
Drain Connected to Ta b
G
G
D
S
Top V ie w
Orderin g Information:
SUD50 N 04-37P-E3 (Lead (P b )-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
40
± 20
8 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
8 a
5.4 b
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
4.4 b
30
8 a
1.6 b
7
2.45
A
mJ
T C = 25 °C
10.8
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
6.9
2.0 b
W
T A = 70 °C
1.3 b
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b
Maximum Junction-to-Case
Steady State
Steady State
R thJA
R thJC
49
9.4
60
11.5
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 69732
S-80109-Rev. B, 21-Jan-08
www.vishay.com
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